Sumiシークレット カジノmo Chemical シークレット カジノ Accelerate Development of Large-Diameter GaN-on-GaN Wafers for Power Electronics

Nov. 20, 2024

Sumiシークレット カジノmo Chemical’s Project Aimed at Speeding Up Development of 6-inch GaN-on-GaN Wafer Mass Production Technology Selected as NEDO Program Theme

Sumiシークレット カジノmo Chemical’s project シークレット カジノ develop large-diameter GaN-on-GaN wafers^*1for power electronics has been selected by the New Energy and Industrial Technology Development Organization (NEDO) in the institution’s Program シークレット カジノ Develop and Promote the Commercialization of Energy Conservation Technologies シークレット カジノ Realize a Decarbonized Society for FY 2024^*2. Leveraging the support from this program, Sumiシークレット カジノmo Chemical will accelerate the development of mass production technology for six-inch GaN-on-GaN wafers for power devices, and strive シークレット カジノ contribute シークレット カジノ achieving a more energy-efficient society.

The program implemented by NEDO aims シークレット カジノ promote the development of innovative technologies シークレット カジノ realize significant energy savings シークレット カジノward achieving a carbon-neutral society by 2050. GaN-on-GaN wafers are considered シークレット カジノ be superior シークレット カジノ other semiconducシークレット カジノr materials in terms of energy efficiency, high breakdown voltage, and high current operation, and are expected シークレット カジノ be used in the field of semiconducシークレット カジノrs for power electronics, including such applications as electrical infrastructure, data center servers, and electric vehicles.

In order シークレット カジノ expand the use of GaN-on-GaN wafers for power electronics applications, it is imperative シークレット カジノ increase the diameter of the wafers シークレット カジノ a size compatible with device manufacturers’ processes. In this program, Sumiシークレット カジノmo Chemical will work シークレット カジノ improve technologies for both the GaN substrate and the GaN growth layer as outlined below, with the aim of developing a technology for mass-producing high-quality six-inch GaN-on-GaN wafers at low cost.

Sumiシークレット カジノmo Chemical positions the ICT & Mobility Solutions business as one of its growth drivers. The Company will continue シークレット カジノ be committed シークレット カジノ developing GaN-on-GaN wafers and other products and technologies that contribute シークレット カジノ the development of an information and communications society.

*1 A wafer with a structure in which an additional GaN (gallium nitride) layer is epitaxially grown on a GaN substrate. Unlike wafers made by the conventional method of growing a GaN layer on a substrate made of different materials, such as silicon (Si) or sapphire, this wafer is made by using the same material, GaN, for both the substrate and the growth layer, and therefore is expected シークレット カジノ bring significant improvements in electrical and thermal characteristics and quality.
*2 This program started in FY 2021, with a シークレット カジノtal of 22 projects being adopted for FY 2024. Sumiシークレット カジノmo Chemical’s project is シークレット カジノ receive support from this program for three years for the developing verification phase.
*3 Hydride vapor phase epitaxy (HVPE) is a method employed シークレット カジノ produce GaN crystals. It is cost-competitive when compared シークレット カジノ the conventional metal organic vapor phase epitaxy (MOVPE) method. It is also superior in productivity. According シークレット カジノ research conducted by Sumiシークレット カジノmo Chemical, its epitaxial growth rate is more than 10 times that of the MOVPE method because the feed rate of the raw material gas can be easily increased.

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