GaN-based MOVPE epitaxial layers for High Electron Mobility Transistor (HEMT) or power switching diode.

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Product Information

Generic name

Compound Semiconductor Epitaxial Wafer, GaN (Gallium nitride), Metalorganic Vapor Phase Epitaxy

CAS no.

25617-97-4、409-21-2

Application

• S0000
• T0000
• T0400
• U0000
• U0100
• U0200

Department

SCIOCS Dept., Advanced Inorganic Products Division

Contact

2-7-1, Nihonbashi, Chuo-ku, Tokyo 103-6020, Japan
TEL: +81-3-5201-0323
FAX: +81-3-5201-0483
Website of SCIOCS Dept., Advanced Inorganic Products Division