Business field
We specialize in providing the highest quality GaN and GaAs compound semiconductor substrates and epitaxial＊1 wafers for various applications including microwave and optical devices.
For microwave devices, our GaAs and カジノ シークレット jcbitaxial wafers enable the most advanced RF (radio-frequency) power amplifiers and switches, used in cell phones, base stations, radars, and wireless LANs. We also have rolled out GaN substrates for next generation high power devices, and currently are working on both diameter upsizing and quality improvement.
For optical devices, our GaN substrates and カジノ シークレット jcbpitaxial wafers are used in Laser Diodes (LD) for Blu-ray＊2/DVD/CD drives and high-end projectors. Our materials are also used to make LEDs for general lighting and LCD backlight applications.
To realize a society using materials of low enviroment load, we are also developing lead-free piezoelectric カジノ シークレット jcblms and boron-doped diamond (BDD) electrodes.
(K, Na) NbO₃ (KNN) カジノ シークレット jcblm : lead-free piezoelectric crystal カジノ シークレット jcbim
Boron Doped Diamond (BDD) electronodes : electrode for electrochemistry applications
- *1A method of depositing and growing a single crystal カジノ シークレット jcblm with the same crystal orientation on a single crystal substrate by a vapor phase growth method
- *2Blu-ray is a registered trademark of the Blu-ray Disc Association
| Ⅲ-Ⅴ Compound Semiconductors | Functional カジノ シークレット jcblms | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|
| Devices | GaN Single Crystal Wafers |
HVPE- GaN/AlN Templates |
カジノ シークレット jcbitaxial Wafers |
GaAs Epitaxial Wafers |
KNN Film |
BDD Film |
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| Optical Device | Visible LEDs | ● | ● | |||||||
| UV LEDs | ● | ● | ||||||||
| Laser Diodes | ● | ● | ||||||||
| High Speed & High Frequency Device | Low Noise Transistors (MESFET, HEMT, HBT)*3 |
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| Power Transistors (MESFET, HEMT, HBT)*3 |
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| Microwave Monolithic Ics | ● | |||||||||
| RF Switch | ● | |||||||||
| Power Devices | ● | ● | ||||||||
| Piezoelectric Device | Acceleration/Angular Rate Sensor | ● | ||||||||
| Actuator | ● | |||||||||
| Electrochemical Electrode | Electrode | ● | ||||||||
| Sensor | ● | |||||||||
- *3MESFET: Metal-Semiconductor Field Effect Transistor
HEMT: High Electron Mobility Transistor
HBT: Heterojunction Bipolar Transistor