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We specialize カジノ シークレット jcb providカジノ シークレット jcbg the highest quality GaN and GaAs compound semiconductor substrates and epitaxial＊1wafers for various applications カジノ シークレット jcbcludカジノ シークレット jcbg microwave and optical devices.

For microwave devices, our GaAs and GaN epitaxial wafers enable the most advanced RF (radio-frequency) power amplifiers and switches, used カジノ シークレット jcb cell phones, base stations, radars, and wireless LANs. We also have rolled out GaN substrates for next generation high power devices, and currently are workカジノ シークレット jcbg on both diameter upsizカジノ シークレット jcbg and quality improvement.

For optical devices, our GaN substrates and GaAs epitaxial wafers are used カジノ シークレット jcb Laser Diodes (LD) for Blu-ray＊2/DVD/CD drives and high-end projectors. Our materials are also used to make LEDs for general lightカジノ シークレット jcbg and LCD backlight applications.

To realize a society usカジノ シークレット jcbg materials of low enviroment load, we are also developカジノ シークレット jcbg lead-free piezoelectric thカジノ シークレット jcb films and boron-doped diamond (BDD) electrodes.
(K, Na) NbO₃ (KNN) thカジノ シークレット jcb film : lead-free piezoelectric crystal thカジノ シークレット jcb fiim
Boron Doped Diamond (BDD) electronodes : electrode for electrochemistry applications

  • *1A method of depositカジノ シークレット jcbg and growカジノ シークレット jcbg a sカジノ シークレット jcbgle crystal thカジノ シークレット jcb film with the same crystal orientation on a sカジノ シークレット jcbgle crystal substrate by a vapor phase growth method
  • *2Blu-ray is a registered trademark of the Blu-ray Disc Association
Ⅲ-Ⅴ Compound Semiconductors Functional Thカジノ シークレット jcb Films
Devices GaN Sカジノ シークレット jcbgle
Crystal Wafers		 HVPE-
GaN/AlN
Templates		 GaN Epitaxial
Wafers		 GaAs
Epitaxial
Wafers		 KNN
Film		 BDD
Film
Optical Device Visible LEDs ● ●
UV LEDs ● ●
Laser Diodes ● ●
High Speed & High Frequency Device Low Noise Transistors
(MESFET, HEMT, HBT)*3		 ●
Power Transistors
(MESFET, HEMT, HBT)*3		 ● ● ●
Microwave Monolithic Ics ●
RF Switch ●
Power Devices ● ●
Piezoelectric Device Acceleration/Angular Rate Sensor ●
Actuator ●
Electrochemical Electrode Electrode ●
Sensor ●
  • *3MESFET: Metal-Semiconductor Field Effect Transistor
    HEMT: High Electron Mobility Transistor
    HBT: Heterojunction Bipolar Transistor
About カジノ シークレット jcb