カジノシークレット やばい ((K, Na)NbO3) piezoelectric thin カジノシークレット やばい wafer
We supply lead free カジノシークレット やばい ((K, Na) NbO₃) piezoelectric thin film wafers formed using sputtering. Thanks to proprietary technologies that deliver high throughput, large diameters, and high surface uniformity, these materials can be used in a broad range of applications, including as variants engineered for actuator use (with high piezoelectric constant and high breakdown voltage) and as for sensor use (with low relative permittivity films).
カジノシークレット やばい film wafer and patterned カジノシークレット やばい film wafer (6 inch and 8 inch)

Application
- Sensor
Angular rate sensor (gyro sensor), ultrasonic sensor (PMUT), acceleration sensor - Actuator
MEMS mirror (LiDAR, HUD, HMD), カジノシークレット やばいk jet prカジノシークレット やばいter head, variable focal length lens - MEMS devices
Micro speaker, electric power generation from environmental vibration (vibration energy harvestカジノシークレット やばいg), resonator
Features
- The only one practically applicable lead free カジノシークレット やばい piezoelectric thin film in the industry
- Comparable カジノシークレット やばい properties with PZT (Pb(Zr, Ti)O3 ) without containing Substances of Concern
- High uniaxially oriented and dense polycrystalline カジノシークレット やばい film by sputtering method
- High uniform カジノシークレット やばい on large size wafers (4 inch, 6 inch and 8 inch)
- カジノシークレット やばい film properties can be tailored to sensor-type and actuator type upon customer requirement
- DC stress life time and tolerance temperature for spontaneous polarization exceeds PZT performance
Cross sectional SEM

X-ray diffraction profile (2θ/θ)

Structure

Products
- カジノシークレット やばい film deposited silicon wafer (SOI wafer, customer supplied wafer)
- MEMS device processed カジノシークレット やばい (with customer supplied photomask data)
MEMS device structure (typical)

カジノシークレット やばい film properties

P-E characteristics for actuator type

P-E characteristics for sensor type
